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n-channel enhancement mode mosfet SM6002NSKP www.sinopowersemi.com 1 sinopower reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. copyright ? sinopower semiconductor, inc. rev. a.3 - july, 2013 ? pin description ordering and marking information features applications smps synchronous rectifier. power management in dc/dc converters. smps secondary o-ring. . 60v/60a, r ds(on) =8m w (max.) @ v gs =10v reliable and rugged lead free and green devices available (rohs compliant) n-channel mosfet note : sinopower lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with rohs. sinopower lead-free products meet or exceed the lead- free requirements of ipc/jedec j-std-020d for msl classification at lead-free peak reflow temperature. sinopower defines green to mean lead-free (rohs compliant) and halogen free (br or cl does not exceed 900ppm by weight in homogeneous material and total of br and cl does not exceed 1500ppm by weight). dfn5x6-8 sm6002ns handling code temperature range package code package code kp : dfn5x6-8 operating junction temperature range c : -55 to 150 o c handling code tr : tape & reel (2500ea/reel) assembly material g : halogen and lead free device sm6002ns kp : sm6002 xxxxx xxxxx - date code assembly material s s s g d d d d g (4) s (1, 2, 3) d (5, 6) pin 1 free datasheet http:///
SM6002NSKP www.sinopowersemi.com 2 copyright ? sinopower semiconductor, inc. rev. a.3 - july, 2013 ? absolute maximum ratings symbol parameter rating unit common ratings (t a =25 c unless otherwise noted) v dss drain-source voltage 60 v gss gate-source voltage 25 v t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c i s diode continuous forward current 30 t c =25 c 120 i dp 300 s pulse drain current tested t c =100 c 80 t c =25 c 60* i d a continuous drain current t c =100 c 38 a t c =25 c 50 p d maximum power dissipation t c =100 c 20 w r q jc thermal resistance-junction to case steady state 2.5 t 10s 20 r q ja thermal resistance-junction to ambient steady state 50 c/w i as b avalanche current, single pulse (l=0.1mh) 45 a e as b avalanche energy, single pulse (l=0.1mh) 100 mj note a * current limited by bond wire. note b uis tested and pulse width limited by maximum junction temperature 150 o c (initial temperature t j =25 o c). electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter test conditions min. typ. max. unit static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =250 m a 60 - - v v ds =48v, v gs =0v - - 1 i dss zero gate voltage drain current t j =125 c - - 30 m a v gs(th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 25v, v ds =0v - - 100 na v gs =10v, i ds =30a - 6.5 8 r ds(on) c drain-source on-state resistance t j =125 c - 10.4 - m w gfs forward transconductance v ds =5v, i ds =20a - 150 - s
SM6002NSKP www.sinopowersemi.com 3 copyright ? sinopower semiconductor, inc. rev. a.3 - july, 2013 ? electrical characteristics (cont.) (t a = 25 c unless otherwise noted) symbol parameter test conditions min. typ. max. unit diode characteristics v sd c diode forward voltage i sd =15a, v gs =0v - 0.8 1.3 v t rr reverse recovery time - 50 - t a charge time - 30 - t b discharge time - 12 - ns q rr reverse recovery charge i ds =30a, dl sd /dt=100a/ m s - 50 - nc dynamic characteristics d r g gate resistance v gs =0v,v ds =0v,f=1mhz 0.7 1.3 1.8 w c iss input capacitance 2000 3000 4200 c oss output capacitance 300 430 580 c rss reverse transfer capacitance v gs =0v, v ds =30v, frequency=1.0mhz 150 250 350 pf t d(on) turn-on delay time - 17 30 t r turn-on rise time - 15 27 t d(off) turn-off delay time - 62 110 t f turn-off fall time v dd =30v, r l =30 w , i ds =1a, v gen =10v, r g =6 w - 32 58 ns gate charge characteristics d q g total gate charge - 76 106 q gth threshold gate charge - 11 16 q gs gate-source charge - 14 25 q gd gate-drain charge v ds =30v, v gs =10v, i ds =30a - 25 36 nc note c pulse test ; pulse width 300 m s, duty cycle 2%. note d guaranteed by design, not subject to production testing.
SM6002NSKP www.sinopowersemi.com 4 copyright ? sinopower semiconductor, inc. rev. a.3 - july, 2013 ? typical operating characteristics power dissipation p tot - power (w) t j - junction temperature ( c) drain current t j - junction temperature i d - drain current (a) thermal transient impedance normalized transient thermal resistance square wave pulse duration (sec) safe operation area v ds - drain - source voltage (v) i d - drain current (a) 0 20 40 60 80 100120140160 0 10 20 30 40 50 60 t c =25 o c 0 20 40 60 80 100120140160 0 10 20 30 40 50 60 70 t c =25 o c,v g =10v 0.01 0.1 1 10 100300 0.1 1 10 100 500 1ms 1s 10ms 100ms dc rds(on) limit t c =25 o c 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja :20 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5
SM6002NSKP www.sinopowersemi.com 5 copyright ? sinopower semiconductor, inc. rev. a.3 - july, 2013 ? v ds - drain - source voltage (v) i d - drain current (a) output characteristics r ds(on) - on - resistance (m w ) drain-source on resistance i d - drain current (a) gate-source on resistance v gs - gate - source voltage (v) r ds(on) - on - resistance (m w ) t j - junction temperature ( c) gate threshold voltage normalized threshold voltage typical operating characteristics (cont.) 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 i ds =30a -50 -25 0 25 50 75 100125150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i ds =250 m a 0 1 2 3 4 5 0 25 50 75 100 125 150 5v 4.5v v gs = 6,7,8,9,10v 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 v gs =10v
SM6002NSKP www.sinopowersemi.com 6 copyright ? sinopower semiconductor, inc. rev. a.3 - july, 2013 ? drain-source on resistance normalized on resistance t j - junction temperature ( c) v sd - source - drain voltage (v) source-drain diode forward i s - source current (a) v ds - drain-source voltage (v) c - capacitance (pf) capacitance gate charge q g - gate charge (nc) v gs - gate-source voltage (v) typical operating characteristics (cont.) -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 r on @t j =25 o c: 6.5m w v gs = 10v i ds = 30a 0.0 0.3 0.6 0.9 1.2 1.5 0.1 1 10 100 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 35 40 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 frequency=1mhz crss coss ciss 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 8 9 10 v ds =30v i ds =30a
SM6002NSKP www.sinopowersemi.com 7 copyright ? sinopower semiconductor, inc. rev. a.3 - july, 2013 ? typical operating characteristics (cont.) transfer characteristics i d - drain current (a) v gs - gate-source voltage (v) 0 1 2 3 4 5 6 0 20 40 60 80 100 120 t j =-55 o c t j =125 o c t j =25 o c
SM6002NSKP www.sinopowersemi.com 8 copyright ? sinopower semiconductor, inc. rev. a.3 - july, 2013 ? avalanche test circuit and waveforms dut 0.01 w tp v dd v ds l i l r g e as v dd t av i as v ds t p v dsx(sus) switching time test circuit and waveforms v dd r d dut v gs v ds r g tp t d (on) t r t d (off) t f v gs v ds 90% 10%
SM6002NSKP www.sinopowersemi.com 9 copyright ? sinopower semiconductor, inc. rev. a.3 - july, 2013 ? package information dfn5x6-8 b e c a d e 1 e recommended land pattern unit: mm note : 1.dimension d, d1,d2 and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed 10 mil. s y m b o l min. max. 1.20 0.3 4.80 5.30 5.90 6.20 5.50 5.80 0.05 3.34 3.9 a b d e e1 e f f1 g h millimeters c 0.19 0.25 1.27 bsc dfn5x6-8 0.35 0.75 min. max. inches 0.047 0.012 0.050 bsc 0.007 0.010 0.189 0.209 0.232 0.244 0.217 0.228 0.002 0.014 0.030 0.131 0.154 0.90 0.035 0.51 0.020 0.30 0.012 g1 k 0.762 0.03 0.05 0.30 0.002 0.012 0.030 0.014 0.75 0.35 d1 4.00 4.40 0.157 0.173 - - d1 h f1 f k g g1 4.6 0.77 6.1 3.6 1.27 0.5 0 . 7 1 1 . 1 8 1 . 1 6 0 . 6 1
SM6002NSKP www.sinopowersemi.com 10 copyright ? sinopower semiconductor, inc. rev. a.3 - july, 2013 ? carrier tape & reel dimensions h t1 a d a e 1 a b w f t p0 od0 b a0 p2 k0 b 0 section b-b section a-a od1 p1 application a h t1 c d d w e1 f 330.0 2.00 50 min. 12.4+2.00 - 0.00 13.0+0.50 -0.20 1.5 min. 20.2 min. 12.0 0.30 1.75 0.10 5.5 0.05 p0 p1 p2 d0 d1 t a0 b0 k0 dfn5x6-8 4.0 0.10 8.0 0.10 2.0 0.05 1.5+0.10 -0.00 1.5 min. 0.6+0.00 -0.4 6.5 0.20 5.3 0.20 1.4 0.20 (mm)
SM6002NSKP www.sinopowersemi.com 11 copyright ? sinopower semiconductor, inc. rev. a.3 - july, 2013 ? classification profile taping direction information user direction of feed dfn5x6-8
SM6002NSKP www.sinopowersemi.com 12 copyright ? sinopower semiconductor, inc. rev. a.3 - july, 2013 ? table 2. pb-free process C classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 350-2000 volume mm 3 >2000 <1.6 mm 260 c 260 c 260 c 1.6 mm C 2.5 mm 260 c 250 c 245 c 3 2.5 mm 250 c 245 c 245 c table 1. snpb eutectic process C classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 235 c 220 c 3 2.5 mm 220 c 220 c test item method description solderability jesd-22, b102 5 sec, 245 c holt jesd-22, a108 1000 hrs, bias @ 125 c pct jesd-22, a102 168 hrs, 100 % rh, 2atm, 121 c tct jesd-22, a104 500 cycles, -65 c~150 c profile feature sn-pb eutectic assembly pb-free assembly preheat & soak temperature min (t smin ) temperature max (t smax ) time (t smin to t smax ) (t s ) 100 c 150 c 60-120 seconds 150 c 200 c 60-120 seconds average ramp-up rate (t smax to t p ) 3 c/second max. 3 c/second max. liquidous temperature (t l ) time at liquidous (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak package body temperature (t p )* see classification temp in table 1 see classification temp in table 2 time (t p )** within 5 c of the specified classification temperature (t c ) 20** seconds 30** seconds average ramp-down rate (t p to t smax ) 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. * tolerance for peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. ** tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. classification reflow profiles customer service sinopower semiconductor, inc. 5f, no. 6, dusing 1st rd., hsinchu science park, hsinchu, 30078, taiwan tel: 886-3-5635818 fax: 886-3-5642050 reliability test program

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